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 P Channel Enhancement Mode MOSFET
ST2341
-3.5A
DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE -20V/-3.3A, RDS(ON) = 36m-ohm (Typ.) @VGS = -10V -20V/-2.8A, RDS(ON) = 45m-ohm @VGS = -4.5V -20V/-2.3A, RDS(ON) = 55m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
3 D G 1 1.Gate 2.Source S 2 3.Drain
PART MARKING SOT-23-3L
3
41YA
1 Y: Year Code 2 A: Process Code
ORDERING INFORMATION Part Number ST2341S23RG Package SOT-23-3L Part Marking 41YA
Process Code : A ~ Z ; a ~ z ST2341S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 2006. Rev.1
P Channel Enhancement Mode MOSFET
ST2341
-3.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70
Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA
Typical -20 12 -3.5 -2.8 -12 -1.0 1.25 0.80 150 -55/150 140
Unit V V A A A W /W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 2006. Rev.1
P Channel Enhancement Mode MOSFET
ST2341
-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
Symbol
Condition
Min
Typ
Max Unit
V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD
VGS=0V,ID=-250uA
-20 -0.9 100 -1 -10 -6
0.036 0.045 0.055
V V nA
VDS=VGS,ID=-250uA -0.35 VDS=0V,VGS=20V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55 VDS-5V,VGS=-4.5V VGS=-4.5V,ID=-3.3A VGS=-2.5V,ID=-2.8A VGS=-1.8V,ID=-2.3A VDS=-5V,ID=-4V IS=-1A,VGS=0V
uA A
3.0 -0.8 -1.2
S V
Qg Qgs Qgd Ciss Coss Crss td(on)
tr
VDS=-6V VGS=-4.5V ID-3.3A VDS=-6.0V VGS=0V F=1MHz VDD=-6V RL=6 ID=-1.0A VGEN=-4.5V RG=6
8.0 1.2 2.2 700 160 120 15 35 60 40
13 nC
pF 25 55 90 40 nS
td(off)
tf
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 2006. Rev.1
P Channel Enhancement Mode MOSFET
ST2341
-3.5A
TYPICAL CHARACTERICTICS (25 Unless noted)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 2006. Rev.1
P Channel Enhancement Mode MOSFET
ST2341
-3.5A
TYPICAL CHARACTERICTICS (25 Unless noted)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 2006. Rev.1
P Channel Enhancement Mode MOSFET
ST2341
-3.5A
SOT-23-3L PACKAGE OUTLINE
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341 2006. Rev.1


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